Detailed Specifications
Overview
The Samsung MZ-V9P2T0B/AM is a 2TB 990 PRO internal solid-state drive using PCIe Gen 4.0 x4 and NVMe 2.0. Its M.2 2280 form factor is designed for compatible client PCs and game consoles requiring high-performance NVMe storage.
Technical Information
The SSD uses Samsung V-NAND 3-bit MLC storage, a Samsung in-house controller, and 2GB of Low Power DDR4 SDRAM cache. It delivers sequential read performance up to 7,450 MB/s and sequential write performance up to 6,900 MB/s. Random performance reaches up to 1,400,000 IOPS for 4KB QD32 reads and 1,550,000 IOPS for 4KB QD32 writes.
Compatibility
The MZ-V9P2T0B/AM uses an M.2 2280 physical format with a PCIe Gen 4.0 x4 NVMe interface. The host system must provide a compatible M.2 PCIe NVMe slot. Actual performance varies according to the host platform, firmware, configuration, and workload.
Key Features
- 2TB storage capacity
- PCIe Gen 4.0 x4 and NVMe 2.0 interface
- Sequential read speeds up to 7,450 MB/s
- Sequential write speeds up to 6,900 MB/s
- Up to 1,400,000 read and 1,550,000 write IOPS at 4KB QD32
Applications
Samsung specifies the drive for client PCs and game consoles. The combination of PCIe Gen 4.0 bandwidth, high sequential throughput, and high random I/O performance supports operating-system storage, applications, games, and other performance-sensitive client workloads.
DC Supplies Product Note
Before deployment, verify that the target system has an M.2 2280 slot supporting PCIe NVMe storage. PCIe Gen 4.0 support is required to reach the drive's specified maximum performance.
Specifications
| Brand | Samsung |
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| Part Number / MPN | MZ-V9P2T0B/AM |
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| Product Type | Internal SSD |
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| Series | 990 PRO |
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| Capacity | 2TB / 2,000GB |
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| Form Factor | M.2 2280 |
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| Interface | PCIe Gen 4.0 x4 |
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| Protocol | NVMe 2.0 |
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| Storage Memory | Samsung V-NAND 3-bit MLC |
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| Controller | Samsung in-house controller |
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| Cache Memory | 2GB Low Power DDR4 SDRAM |
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| Sequential Read | Up to 7,450 MB/s |
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| Sequential Write | Up to 6,900 MB/s |
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| Random Read, 4KB QD32 | Up to 1,400,000 IOPS |
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| Random Write, 4KB QD32 | Up to 1,550,000 IOPS |
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| Random Read, 4KB QD1 | Up to 22,000 IOPS |
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| Random Write, 4KB QD1 | Up to 80,000 IOPS |
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| Encryption | AES 256-bit, TCG/Opal, IEEE1667 |
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| TRIM Support | Supported |
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| S.M.A.R.T. Support | Supported |
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| Garbage Collection | Automatic |
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| Device Sleep Mode | Supported |
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| Allowable Voltage | 3.3V ±5% |
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| Average Power Consumption | 5.5W |
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| Maximum Burst Power | 8.5W |
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| Idle Power Consumption | Maximum 55mW |
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| Operating Temperature | 0–70°C |
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| Shock | 1,500G / 0.5ms |
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| MTBF | 1.5 million hours |
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| Endurance | 1,200 TBW |
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| Warranty | 5-year limited or 1,200 TBW limited warranty |
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