Detailed Specifications
Samsung MZ-V9P4T0B/AM 4TB NVMe PCIe 4.0 M.2 SSD 7450MB/s
Overview :
Samsung MZ-V9P4T0B/AM is a 4TB high-performance NVMe SSD from the 990 PRO series, engineered for gaming systems, high-end workstations, and data-intensive workloads. It is built for environments where low latency and maximum throughput are critical.
The drive utilizes a PCIe 4.0 x4 interface with NVMe 2.0 protocol, delivering sequential read speeds up to 7450 MB/s and write speeds up to 6900 MB/s×approaching the upper limits of Gen4 bandwidth.
It features Samsung V-NAND flash with an in-house controller optimized for power efficiency and sustained performance under heavy workloads. Endurance is rated up to 2400 TBW, making it suitable for long-term intensive use cases such as content creation, simulation, and high-frequency data access.
The M.2 2280 form factor ensures compatibility with modern desktops, laptops, and servers supporting PCIe Gen4 slots. It is not suitable for legacy SATA-only systems or environments lacking adequate thermal management for high-speed NVMe drives.
Key Features :
- 4TB capacity for high-performance workloads
- PCIe 4.0 x4 NVMe interface for max throughput
- Up to 7450MB/s read and 6900MB/s write
- 2400 TBW endurance for heavy usage cycles
- M.2 2280 form factor for modern systems
Specifications :
| Specification | Details |
|---|
| Brand | Samsung |
| Part Number | MZ-V9P4T0B/AM |
| Product Type | Internal NVMe Solid State Drive |
| Capacity | 4 TB |
| Form Factor | M.2 2280 |
| Interface | PCIe 4.0 x4, NVMe 2.0 |
| Max Read Speed | Up to 7450 MB/s |
| Max Write Speed | Up to 6900 MB/s |
| NAND Type | Samsung V-NAND |
| Endurance | Up to 2400 TBW |
| Encryption | TCG Opal 2.0, AES 256-bit |
| Compatibility | Desktop, Laptop, Workstation |
| Use Case | Gaming, Content Creation, HPC |
