Detailed Specifications
Samsung MZ-VAP4T0B/AM NVMe SSD 4TB
Overview :
The Samsung MZ-VAP4T0B/AM is a 4TB PCIe Gen5 NVMe M.2 SSD designed for high-performance computing environments. It targets workstation users, AI workloads, and high-throughput applications requiring ultra-low latency and sustained bandwidth.
Built on PCIe 5.0 x4 with NVMe 2.0, it delivers sequential read speeds up to 14,800 MB/s and write speeds up to 13,400 MB/s, enabling large dataset processing, real-time analytics, and heavy parallel workloads.
Deployment is optimized for M.2 2280-enabled systems including modern servers, high-end desktops, and edge compute nodes where density and performance per watt matter. It integrates Samsung V-NAND TLC with onboard DRAM cache for consistent throughput under load.
Compatibility requires PCIe Gen5 infrastructure to achieve full performance. It is not suitable for legacy systems limited to PCIe Gen3/Gen4 if cost-to-performance efficiency is a priority.
Key Features :
- PCIe 5.0 x4 interface for ultra-high bandwidth
- Up to 14,800 MB/s read, 13,400 MB/s write
- 4TB capacity for data-intensive workloads
- Up to 2.2M IOPS random read performance
- AES 256-bit encryption with enterprise security
Specifications :
| Specification | Details |
|---|
| Brand | Samsung |
| Part Number | MZ-VAP4T0B/AM |
| Product Type | NVMe Internal SSD |
| Capacity | 4TB |
| Interface | PCIe 5.0 x4, NVMe 2.0 |
| Form Factor | M.2 2280 |
| Sequential Read Speed | Up to 14,800 MB/s |
| Sequential Write Speed | Up to 13,400 MB/s |
| Random Read IOPS | Up to 2,200,000 IOPS |
| NAND Type | V-NAND TLC |
| DRAM Cache | 4GB LPDDR4x |
| Endurance (TBW) | 2400 TBW |
| MTBF | 1.5 million hours |
| Encryption | AES 256-bit, TCG Opal 2.0 |
